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Make : PJSEMI
Manufacturer P/N : MMBT8050D
Transistor Type: NPN
Current – Collector (Ic) (Max): 600mA
Voltage – Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 0.5 @50mA, 500mA
Current – Collector Cutoff (Max) :
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @100mA, 1V
Power – Max: 350mW
Transition Frequency: 100 MHz
Operating Temperature: -40°C to 125°C
Mounting Type : Surface Mount
Device Package : SOT-23

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Description

MMBT8050D is a NPN Bi-Polar Junction (BJT) transistor useful for switching and amplifier applications.

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