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Make : NXP
Manufacturer P/N : PBSS4160DS,115
Transistor Type: 2 NPN ( Array of 2)
Current – Collector (Ic) (Max): 1A
Voltage – Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV@100mA, 1A
Current – Collector Cutoff (Max) : 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @500mA, 5V
Power – Max: 420mW
Transition Frequency: 220 MHz
Operating Temperature: 150°C (Tj)
Mounting Type : Surface Mount
Device Package : SOT-457, 6-TSOP

Category:

Description

PBSS4160 is NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5160DS.

Features:
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller Printed-Circuit Board (PCB) area required than for conventional transistors

Applications:
Dual low power switches (e.g. motors, fans)
Automotive applications

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